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| inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor MJ4030 description with to-3 package respectively complement to type mj4035 darlington high dc current gain applications for use as output devices in comple mentary general purpose amplifier applications. absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -16 a i b b base current -0.5 a p c collector power dissipation@t c =25 150 w t j junction temperature 200 t stg storage temperature -55~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.17 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor MJ4030 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo collector-emitter breakdown voltage i c =-100ma; i b = 0 b -60 v v ce (sat) -1 collector-emitter saturation voltage i c =-10a; i b =-40ma -2.5 v v ce (sat) -2 collector-emitter saturation voltage i c =-16a; i b =-80ma -4 v v be (sat) base-emitter saturation voltage i c =-5a; i b =-400ma -3 v v be (on) base-emitter on voltage i c =-10a ; v ce =-3v -3 v i cer collector cutoff current v cb =-60v; r be = 1k ; v cb =-60v; r be = 1k ; t c = 150 -1 -5 ma i ceo collector cutoff current v ce =-30v; i b =0 -3 ma i ebo emitter cut-off current v eb =-5v; i c = 0 -5 ma h fe dc current gain i c =-10a ; v ce =-3v 1000 isc website www.iscsemi.cn 2 |
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